MF153500 - SEMI MF1535 - Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance StdPbc-1221 interfaces

interfaces

and devices for wafers that have undergone processing and are entering 3D stacking process steps

orgで入手可能となる。初版は1998年6月に発行，前版は2004年7月に発行された。

SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance

000 Ω per square

MF153500 - SEMI MF1535 - Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance StdPbc-1221 interfacesIf the free carrier density of an electronic grade semiconductor is not too high, the carrier recombination lifetime is controlled by impurity centers that have energies located in the forbidden energy gap. Many metallic impurities form such recombination centers in silicon. In most cases, very small densities of these impurities (1010 atoms cm3) reduce the carrier recombination lifetime and adversely affect device and circuit performance. Such